technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com npn silicon transistor qualified per mil-prf-19500/317 t4-lds-0057 rev. 2 (081394) page 1 of 2 devices levels 2n2369a 2n2369aub 2n4449 jan 2n2369au 2n2369aubc * jantx 2n2369aua jantxv jans * available to jans quality level only. absolute maximum ratings (t c = +25c unless otherwise noted) parameters / test conditio ns symbol value unit collector-emitter voltage 2n2369a / u / ua 2n4449 / ub / ubc v ceo 15 20 vdc emitter-base voltage 2n2369a / u / ua 2n4449 / ub / ubc v ebo 4.5 6.0 vdc collector-base voltage v cbo 40 vdc collector-emitter voltage i ces 40 vdc total power dissipation @ t a = +25c 2n2369a; 2n4449 ua, ub, ubc u p t 0.36 (1) 0.36 (1, 5) 0.50 (4) w operating & storage junction temperature range t op , t stg -65 to +200 c thermal char acteristics parameters / test conditio ns symbol value unit thermal resistance, ambient-to-case 2n2369a; 2n4449 ua, ub, ubc u r ja 400 400 (5) 350 c/w note: 1. derate linearly 2.06 mw/c above t a = +25c. 2. derate linearly 4.76 mw/c above t c = +95c. 3. derate linearly 3.08 mw/c above t c = +70c. 4. derate linearly 3.44 mw/c above t a = +54.5c. 5. mounted on fr-4 pcb (1oz. cu) with contact s 20 mils larger than package pads. electrical characteristics (t a = +25c, unless otherwise noted) parameters / test conditions symbol min. max. unit off charactertics collector-emitter breakdown voltage i c = 10madc v (br)ceo 15 vdc collector-base cutoff current v ce = 20vdc i ces 0.4 adc to-18 (to-206aa) 2n2369a to-46 (to-206ab) 2n4449 surface mount ua surface mount ub & ubc (ubc = ceramic lid version) surface mount u (dual transistor) downloaded from: http:///
technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com npn silicon transistor qualified per mil-prf-19500/317 t4-lds-0057 rev. 2 (081394) page 2 of 2 electrical characteristics (t a = +25c, unless otherwise noted) parameters / test conditions symbol min. max. unit off characteristics emitter-base breakdown voltage v eb = 4.5vdc 10 emitter-base cutoff current v eb = 4.0vdc i ebo 0.25 adc collector- base breakdown voltage v cb = 40vdc 10 collector-base cutoff current v cb = 32vdc i cbo 0.2 adc on characteristics (1) forward-current transfer ratio i c = 10madc, v ce = 0.35vdc i c = 30madc, v ce = 0.4vdc i c = 10madc, v ce = 1.0vdc i c = 100madc, v ce = 1.0vdc h fe 40 30 40 20 120 120 120 120 collector-emitter saturation voltage i c = 10madc, i b = 1.0madc i c = 30madc, i b = 3.0madc i c = 100madc, i b = 10madc v ce(sat) 0.20 0.25 0.45 vdc base-emitter saturation voltage i c = 10madc, i b = 1.0madc i c = 30madc, i b = 3.0madc i c = 100madc, i b = 10madc v be(sat) 0.70 0.80 0.85 0.90 1.20 vdc dynamic characteristics parameters / test conditions symbol min. max. unit forward current transfer ratio i c = 10madc, v ce = 10vdc, f = 100mhz |h fe | 5.0 10 output capacitance v cb = 5.0vdc, i e = 0, 100khz f 1.0mhz c obo 4.0 pf input capacitance v eb = 0.5vdc, i c = 0, 100khz f 1.0mhz c ibo 5.0 pf switching characteristics parameters / test conditions symbol min. max. unit turn-on time i c = 10madc; i b1 = 3.0madc, i b2 = -1.5madc t on 12 s turn-off time i c = 10madc; i b1 = 3.0madc, i b2 = -1.5madc t off 18 s charge storage time i c = 10madc; i b1 = 10madc, i b2 = 10madc t s 13 s (1) pulse test: pulse width = 300 s, duty cycle 2.0%. downloaded from: http:///
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